unisonic technologies co., ltd 18N50 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-477.b 18 amps, 500 volts n-channel power mosfet ? description the utc 18N50 is an n-channel enhancement mode power mosfet using utc?s advanced planar stripe and dmos technology to provide perfect performance. this technology can withstand high energy pulse in the avalanche and commutation mode. it can prov ide minimum on-state resistance and high switching speed. this device is generally applied in active power factor correction and high efficient switched mode power supplies. ? features * 18a, 500v, r ds(on) =0.265 ? @ v gs =10v * high switching speed * typically 45nc low gate charge * 100% avalanche tested * typically 25pf low c rss * improved dv/dt capability ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 18N50l-tf1-t 18N50g -tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
18N50 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-477.b ? absolute maximum ratings parameter symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v continuous i d 18 a drain current pulsed (note 1) i dm 72 (note 6) a single pulsed (note 2) e as 945 mj avalanche energy repetitive (note 1) e ar 23.5 mj avalanche current (note 1) i ar 18 a peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns power dissipation p d 38.5 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 3.3 c/w
18N50 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-477.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 500 v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.5 v/c v ds =500v, v gs =0v 1 a drain-source leakage current i dss v ds =400v, t c =125c 10 a forward v gs = 30 v, v ds = 0 v 100 gate-source leakage current reverse i gss v gs = -30 v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v drain-source on-state resistance r ds(on) v gs =10v, i d =9a 0.220 0.265 ? forward transconductance g fs v ds =40v, i d =9a (note 4) 25 s dynamic parameters input capacitance c iss 2200 2860 pf output capacitance c oss 330 430 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 25 40 pf switching parameters total gate charge q g 45 60 nc gate-source charge q gs 12.5 nc gate-drain charge q gd v ds =400v, v gs =10v, i d =18a (note 4,5) 19 nc turn-on delay time t d(on) 55 120 ns turn-on rise time t r 165 340 ns turn-off delay time t d(off) 95 200 ns turn-off fall time t f v dd =250v, i d =18a, r g =25 ? (note 4,5) 90 190 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 18 a maximum body-diode pulsed current i sm 72 a drain-source diode forward voltage v sd i s =18a, v gs =0v 1.4 v body diode reverse recovery time t rr 500 ns body diode reverse recovery charge q rr v gs =0v, i s =18a, di f /dt=100a/ s (note 4) 5.4 c notes : 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=5.2mh, i as =18a, v dd =50v, r g =25 ? , starting t j =25c 4. i sd 18a, di/dt 200a/ s, v dd bv dss , starting t j =25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature 6. drain current limited by maximum junction temperature
18N50 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-477.b ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
18N50 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-477.b ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
18N50 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-477.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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